Gan - based meta1 - semiconductor - metal ( msm ) structure ultraviolet photodetector has been one of the focuses of interest in recent years for its plane structure , fabrication simplicity , and easy integration . however , the mechanisms of the i - v characteristics under illumination , the photocurrent gain and the strong persistent photoconductivity ( ppc ) are still unexplained to this day 當(dāng)前, gan基msm結(jié)構(gòu)紫外探測器在穩(wěn)態(tài)光照下的電流和響應(yīng)度隨偏壓變化的關(guān)系、實驗中觀測到的光增益現(xiàn)象以及持續(xù)光電導(dǎo)效應(yīng)( ppc ) ,都沒有明確的理論解釋,因此器件設(shè)計中難以保證gan基msm結(jié)構(gòu)紫外探測器的性能。